Two inch diameter, highly conducting bulk <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by the Czochralski method
نویسندگان
چکیده
Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the cylinder length up to one were grown by Czochralski method. The obtained revealed high structural quality characterized narrow x-ray rocking curves (FWHM ≤ 25 arc sec) and surface smoothness (RMS < 200 pm) of epi-ready wafers. free electron concentration Hall mobility at room temperature in range 1.6–9 × 10 18 cm −3 118 – 52 V −1 s , respectively, which are not affected a heat treatment temperatures 1000 °C an oxidizing atmosphere. Temperature-dependent electrical properties degenerated semiconducting state. Both make well suited as substrates for homoepitaxy electronic device fabrication vertical configuration.
منابع مشابه
Growth of Oxide Laser Crystals by Czochralski Method
The growth of series of actual laser crystals belonging to di erent structural types by the Czochralski method is presented. The primary attention is given to single crystalline compounds and their solid solutions with garnet structure (scandium-containing rare-earth garnets with general formula {LnSc}3[ScMe]2Me3O12, Me = Al, Ga) as well as with olivine (forsterite Mg2SiO4) and scheelite struct...
متن کاملOrthoferrite Single Crystals Growing by Modified Czochralski Method and their Properties
To obtain bulk? large-sized orthoferrite single crystals with different rare-earth elements a new crystal growth technology is proposed including modified Czochralski method and using no metal crucibles for melt suspension. For this purpose two unusual Czochralski method modifications are used. In the first one the melt of crystall~zed material 1s obtained at heating the upper surface of pol~cq...
متن کاملThermal stress reduction for a Czochralski grown single crystal
In this paper an optimal control approach for thermal stress reduction inside a Czochralski grown single crystal is presented. Using the lateral heat flux as a control variable, an optimal control formulation for minimizing thermal stress with a given crystal shape is derived. Since thermal stress is also affected by the lateral shape of crystals during growth, the level of the stress can be re...
متن کاملEffect of impurities on the optical properties of KTP single crystals grown from flux
In the present work, KTP crystals have been grown by spontaneous nucleation technique in flux medium using K6P4O13 flux. 0.4-1 °C/h cooling rates were applied in the spontaneous nucleation process. The presence and amount of impurities has been determined by using XRF. The optical transmission spectra of impure KTP crystals in the UV–visible region are discussed. The transmission cut-off is cle...
متن کاملPhotoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method
In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0086996